丝印：UTD；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 1098~ 1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (unidirectional) Low clamping voltage Working voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lighting) 13.8 ~ 100A (8/20μs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (con

文件：5.10371 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：UTD；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 1098~1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Working Voltages: 3.3V~48V Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT)

文件：4.85396 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.79 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.31 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：295.76 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：295.76 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：295.76 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：295.76 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：295.76 Kbytes 页数：6 Pages

UTC

友顺

Analog Level Detectors 10 to 1000 MHz

文件：141.3 Kbytes 页数：4 Pages

TELEDYNE

华特力科