UT8R128K32 128K x 32 SRAM

INTRODUCTION The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces po

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UT8R128K32 128K x 32 SRAM

INTRODUCTION The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces po

文件：274.42 Kbytes 页数：22 Pages

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UT8R128K32 128K x 32 SRAM

INTRODUCTION The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces po

文件：274.42 Kbytes 页数：22 Pages

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UT8R128K32 128K x 32 SRAM

INTRODUCTION The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces po

文件：274.42 Kbytes 页数：22 Pages

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UT8R128K32 128K x 32 SRAM

INTRODUCTION The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces po

文件：274.42 Kbytes 页数：22 Pages

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UT8R512K8 512K x 8 SRAM

INTRODUCTION The UT8R512K8 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces powe

文件：236.71 Kbytes 页数：23 Pages

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UT8R512K8 512K x 8 SRAM

INTRODUCTION The UT8R512K8 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces powe

文件：236.71 Kbytes 页数：23 Pages

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UT8R512K8 512K x 8 SRAM

INTRODUCTION The UT8R512K8 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces powe

文件：236.71 Kbytes 页数：23 Pages

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UT8R512K8 512K x 8 SRAM

INTRODUCTION The UT8R512K8 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces powe

文件：236.71 Kbytes 页数：23 Pages

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UT8R512K8 512K x 8 SRAM

INTRODUCTION The UT8R512K8 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces powe

文件：236.71 Kbytes 页数：23 Pages

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