35A, 60V N-CHANNEL POWER MOSFET

The UTC UT35N06 is a N-channel enhancement MOSFETusing UTC’s advanced technology to provide the customers withperfect RDS(ON) and high switching speed.The UTC UT60N06 is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts,etc. RDS(ON) ≤ 15mΩ @ VGS=10V, ID=15ARDS(ON) ≤ 23mΩ @ VGS=4.5V, ID=15A High Switching Speed;

UTC

友顺

60V N-Channel Power Mosfet

Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

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UMW

友台半导体

60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

文件：733.36 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

60V N-Channel Trench MOSFET

文件：812.36 Kbytes 页数：8 Pages

SEMIHOW