N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested

文件：406.44 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

4.1 A, 60 V (D-S) N-CHANNEL POWER MOSFET

文件：152.56 Kbytes 页数：3 Pages

UTC

友顺

4.1 A, 60 V (D-S) N-CHANNEL  POWER MOSFET

The UTC UT3458 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage. • VDS=60V \n• RDS(ON)=0.1 Ω @ VGS=10V, \n•  RDS(ON)=0.128Ω @ VGS=4.5V;

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件：180.54 Kbytes 页数：4 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件：180.54 Kbytes 页数：4 Pages

UTC

友顺

4.1 A, 60 V (D-S) N-CHANNEL POWER MOSFET

文件：152.56 Kbytes 页数：3 Pages

UTC

友顺