N-CHANNEL ENHANCEMENT MODE

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Trench Power MOSFET  (N-CH)

The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) < 50mΩ @VGS = 4.5V \n• RDS(ON) < 63mΩ @VGS = 2.5V \n• RDS(ON) < 87mΩ @VGS = 1.8V \n• Low capacitance \n• Low gate charge \n• Fast switching capability \n• Avalanche energy specified;

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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N-CHANNEL ENHANCEMENT MODE

文件：200.79 Kbytes 页数：4 Pages

UTC

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：222.87 Kbytes 页数：4 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件：200.79 Kbytes 页数：4 Pages

UTC

友顺