| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
UT100 | Ultra Voltage, High Frequncy Pulse, R&R-c Tank, High Energy. 文件:158.2 Kbytes 页数:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
UT100 | Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy 文件:864.54 Kbytes 页数:2 Pages | WILLOW | WILLOW | |
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V 文件:275.27 Kbytes 页数:5 Pages | UTC 友顺 | UTC |
技术参数
- VRRM(V):
400
- VF @ 25°C(V):
1.4
- IR @ 25°C(uA):
5
- TRR (ns):
50
- IFSM(A):
150
- Package:
TO-220AC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO220 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
UTC |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UTC/友顺 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UTC/友顺 |
2022+ |
DFN56 |
5000 |
原厂代理 终端免费提供样品 |
询价 | ||
UTMC |
25+ |
47 |
公司优势库存 热卖中!! |
询价 | |||
UTC/友顺 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
UTC |
1932+ |
TO-220 |
377 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
UTC/友顺 |
新年份 |
TO-220 |
68552 |
一级代理原装正品现货,支持实单! |
询价 | ||
UTC/友顺 |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
UTC |
23+ |
原封原装 |
10000 |
询价 |
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