1200V NPT PLANAR IGBT

The UTC UPG50N120 is a 1200V NPT Planar Insulated GateBipolar Transistor. it uses UTC’s advanced technology to offerssuperior conduction and switching performance, high avalancheruggedness and easy parallel operation. High speed switching High input impedance Low saturation voltage: VCE(SAT) =2.6V @ IC=50A;

UTC

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SiC Power MOSFET

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IXYS

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IGBT with Reverse Blocking capability

Features ● IGBT with NPT (non punch through) structure ● reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery ● positive temperature coefficient of saturation vol

文件：53.05 Kbytes 页数：2 Pages

IXYS

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STMICROELECTRONICS

意法半导体