UPG2255T6N-E2中文资料瑞萨数据手册PDF规格书

厂商型号	UPG2255T6N-E2
功能描述	GaAs HJ-FET INTEGRATED CIRCUIT
丝印标识	G5W
封装外壳	TSON
文件大小	255.18 Kbytes
页面数量	13 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 18:05:00
人工找货	UPG2255T6N-E2价格和库存，欢迎联系客服免费人工找货

FEATURES

• Operating frequency : fopt = 1 880 to 1 930 MHz (1 890 MHz TYP.)

• Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (3.3 V TYP.)

• Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.)

• Circuit current : IDD = 200 mA TYP. @ VDD1, 2, 3 = 3.3 V, Vcont = 1.8 V, Pin = −8 dBm

• Output power : Pout = +25 dBm TYP. @ VDD1, 2, 3 = 3.3 V, Vcont = 1.8 V, Pin = −8 dBm

• Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 3.3 V, Vcont = 0 to 1.8 V, Pin = −8 dBm

• High efficiency : PAE = 50 TYP. @ VDD1, 2, 3 = 3.3 V, Vcont = 1.8 V, Pin = −8 dBm

• High-density surface mounting : 6-pin plastic TSON package (T6N) (1.5 × 1.5 × 0.37 mm)