UPG2250T5N-E2RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

厂商型号	UPG2250T5N-E2
参数属性	UPG2250T5N-E2 封装/外壳为6-XFDFN 裸露焊盘；包装为卷带（TR）；类别为RF/IF射频/中频RFID的射频放大器；产品描述：IC AMP BLUETOOTH 6-TSON
功能描述	GaAs INTEGRATED CIRCUIT
丝印标识	G5C
封装外壳	TSON / 6-XFDFN 裸露焊盘
文件大小	261.45 Kbytes
页面数量	13 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-2 9:22:00
人工找货	UPG2250T5N-E2价格和库存，欢迎联系客服免费人工找货

FEATURES

• Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)

• Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.)

• Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.)

• Circuit current : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm

: IDD = 170 mA TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pout = +24 dBm

• Output power : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm

: Pout = +25.0 dBm TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = −5 dBm

• Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm

• High efficiency : PAE = 55 TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm

• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)