NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES

文件：134.62 Kbytes 页数：8 Pages

NEC

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GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

文件：207.87 Kbytes 页数：12 Pages

RENESAS

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L-BAND HIGH POWER SPDT SWITCH

文件：86.16 Kbytes 页数：10 Pages

NEC

瑞萨

L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECs UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation. FEATURES • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1

文件：547 Kbytes 页数：9 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 2.5GHZ 6-SMINI

CEL