LOW NOISE WIDE-BAND AMPLIFIER

DESCRIPTION The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave communication and measurement equipment. FEATURES • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP

文件：57.54 Kbytes 页数：4 Pages

NEC

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GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz • Input/output impedance matched to 50
• Hermetic sealed ceramic package assures high reliability

文件：217.3 Kbytes 页数：10 Pages

RENESAS

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LOW NOISE WIDE-BAND AMPLIFIER

Renesas

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WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

文件：106.01 Kbytes 页数：8 Pages

NEC

瑞萨

LOW NOISE WIDE-BAND AMPLIFIER

DESCRIPTION The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave communication and measurement equipment. FEATURES • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP

文件：57.54 Kbytes 页数：4 Pages

NEC

瑞萨

GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz

文件：212.09 Kbytes 页数：10 Pages

RENESAS

瑞萨