UPD753036中文资料瑞萨数据手册PDF规格书

FEATURES

• Low voltage operation VDD = 1.8 to 5.5 V

• Can be driven by two 1.5 V batteries

• On-chip memory

• Program memory (ROM): 16384 × 8 bits

• Data memory (RAM): 768 × 4 bits

• Capable of high-speed operation and variable

instruction execution time for power saving

• 0.95, 1.91, 3.81, 15.3 μs (@ 4.19 MHz)

• 0.67, 1.33, 2.67, 10.7 μs (@ 6.0 MHz)

• 122 μs (@ 32.768 kHz)