UPD6336C

QUAD/OCTAL 6BIT D/A CONVERTER CMOS LSI

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPD6336C

MOS INTEGRATED CIRCUIT

FEATURES •R-2RladderD/A •SerialDatainput(DATAIN,CLOCK,LOAD) •Powersupplyvoltageofinterfaceis5V(VCC)andD/Areferencevoltageisfree(VCCto15V).

6336

N-Channel60V(D-S)MOSFET

AU6336

USB2.0SD/MMCSingleLUNCardReaderController

Description AU6336isanUSB2.0high-speedtransmissioncontroller,whichisdesignedasabridgebetweenUSBandSDcompatibleflashcardinterface,suchasSD,HS-SD,MMC,HS-MMC,RS-MMC,MMCmicro…etc.AU6336canreaddigitalcontentsstoredonmemorycarddesignedtocoverawideareaofapp

CD6336

0.5WZenerDiode

Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades.

CEB6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,25A,RDS(ON)=41mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU6336

N-Channel60-V(D-S)MOSFET

CEU6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,25A,RDS(ON)=41mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.