128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi

文件：785.4 Kbytes 页数：86 Pages

ELPIDA

尔必达

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：962.7 Kbytes 页数：86 Pages

ELPIDA

尔必达

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description\nThe µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge •Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge\n•Possible to assert random column address in every cycle\n•Byte control by LDQM and UDQM\n•Programmable burst length (1, 2, 4, 8 and full page)\n•Ambient temperature (TA): −40 to + 85°C\n•CBR (Auto) refresh and sel;

Micron

美光

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Micron

美光