UPD431000A数据手册供应代理瑞萨NEC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
UPD431000A	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000A	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000A	文件：211.06 Kbytes Page：28 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000A-AXX	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000A-AXXX	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000A-BXX	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000ACZ-70L	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000ACZ-70LL	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000ACZ-85L	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000ACZ-85LL	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000AGU-B10-9JH	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000AGU-B10-9JH	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B10-9KH	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000AGU-B10-9KH	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B10X-9JH	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B10X-9JH-A	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B12-9JH	文件：227.57 Kbytes Page：32 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPD431000AGU-B12-9JH	文件：892.69 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B12X-9JH	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGU-B12X-9JH-A	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
UPD431000A
制造商：
NEC Electronics Corporation
制造商：
Renesas Electronics Corporation
功能描述：
SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin PDIP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	UPD431000AGW-70L	NEC	00+	SOP32	41	全新原装100真实现货供应	询价
深圳市凯斯宇科技有限公司	UPD431000AGW-70L	NEC	2022	SOP32	8	原厂原装正品,价格超越代理	询价
深圳市恒创达实业有限公司	UPD431000AGW-70LL	NEC	17+	SOP32	6200	100%原装正品现货	询价
深圳市力通伟业半导体有限公司	UPD431000AGW-80Y	NEC	05+	SSOP	320	特价热销现货库存100%原装正品欢迎来电订购!	询价
深圳市毅创腾电子科技有限公司	UPD431000AGZ-70LL-KKH	NEC		TSOP	5000	正品原装--自家现货-实单可谈	询价
深圳市博浩通科技有限公司	UPD431000AGW-70LL	NEC	23+	SOP32	7750	全新原装优势	询价
深圳市勤思达科技有限公司	UPD431000AGW-B15	NEC	23+	SOP-32	5000	原装现货,优势热卖	询价
齐创科技(上海,北京,青岛)有限公司	UPD431000AGZ-70X-KJH	原厂正品	23+	PLCC-44	5000	原装正品,假一罚十	询价
深圳市福安瓯科技有限公司	UPD431000AGZ-B15-KKH	NEC	22+	TSOP	5000	强调现货,随时查询!	询价
深圳市益百分电子有限公司	UPD431000AGW-70L	NEC	08PB	SOP32	1570	全新原装进口自己库存优势	询价

更多UPD431000A供应商更新时间2024-6-4 15:42:00

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