UPD168118BFC-AA1-E1-A中文资料瑞萨数据手册PDF规格书

FEATURES

• Seven H-bridge circuits employing power MOS FET

• Low-voltage driving

VDD = 2.7 to 3.6 V

VM = 2.7 to 5.5 V

• Output on-state resistance: 1.5 Ω TYP., 2.0 Ω MAX. (sum of top and bottom stages, ch1 to ch6)

1.0 Ω TYP., 1.5 Ω MAX. (sum of top and bottom stages, ch7)

• PWM output (ch1 to ch6), linear output (ch7)

• Output current

DC current: 0.4 A/ch (when each channel is used independently)

Peak current: 0.7 A/ch (when each channel is used independently)

DC current: 0.5 A/ch (when used independently)

Peak current: 0.7 A/ch (when used independently)

• Input logic frequency: 150 kHz supported

• Under-voltage lockout circuit

Shuts down the internal circuit at VDD = 1.7 V TYP.

• Overheat protection circuit

Operates at 150°C or more and shuts down internal circuitry

• High-accuracy reference voltage in ch7 (±5)

• On-chip photo interrupter PI driver (5 Ω on-state resistance)

• On-chip photo interrupter PI buffer switch

• Motor operation settings and ch1 to ch4 and ch7 current settings are possible with 8-bit serial data

• Mounted on 64-pin FLGA (5 x 5 mm) (0.5 mm pitch)