UPD168117AFC-BA2-E1-A中文资料瑞萨数据手册PDF规格书

FEATURES

• Seven H-bridge circuits employing power MOS FET

• Low-voltage driving

VDD = 2.7 to 3.6 V

VM = 2.7 to 5.5 V

• Output on-state resistance: 1.0 Ω TYP., 1.5 Ω MAX. (sum of top and bottom stage, ch1 to ch4, and ch7)

1.5 Ω TYP., 2.0 Ω MAX. (sum of top and bottom stage, ch5 and ch6)

• PWM output (ch1 to ch6), linear output (ch7)

• Output current

DC current: 0.4 A/ch (when each channel is used independently)

Peak current: 0.7 A/ch (when each channel is used independently)

DC current: 0.5 A/ch (when used independently)

Peak current: 0.7 A/ch (when used independently)

• Input logic frequency: 150 kHz supported

• Under-voltage lockout circuit

Shuts down the internal circuit at VDD = 1.7 V TYP.

• Overheat protection circuit

Operates at 150°C or more and shuts down internal circuitry.

• Mounted on 64-pin FLGA (□6 mm, 0.65 mm pitch)