UPD168103中文资料瑞萨数据手册PDF规格书

FEATURES

• 5-ch H-bridge circuits employing power MOS FET

• Low-voltage driving

LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V

• Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V)

• PWM output (ch1 to ch4)

• Output current

DC current: ±0.3 A/ch (when each channel is used independently)

Peak current: ±0.7 A/ch (when each channel is used independently)

• 3-ch general-purpose operational amplifier

Input offset voltage: ±5 mV

Input voltage range: 0 to AVDD − 1.5 V

Output voltage range: 0.2 to AVDD − 0.2 V

• 1-ch current sink amplifier

Output current: 5 mA

• 1-ch 1/2VDD output amplifier

• IRIS driver block supporting linear driving

• Pre-driver amplifier of the IRIS driver block

• Undervoltage lockout circuit

Output circuit and amplifier stop at LVDD = 1.7 V TYP. or less.

• Overheat protection circuit

Operates at 150°C or more and shuts down the output circuit.

• Mounted on 48-pin plastic WQFN (7 x 7)