UPD16808GS中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially improved as compared with conventional driver circuits that use bipolar transistors.

Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.

FEATURES

• Low ON resistance (sum of ON resistors of top and bottom FETS)

RON1 = 1.0 Ω TYP. (VM = 5.0 V)

RON2 = 1.5 Ω TYP. (VM = 12.0 V)

• Low current consumption: IDD = 0.4 mA TYP.

• Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected)

• Motor voltage 12 V/5 V compatible

• Compact surface mount package: 20-pin plastic SOP (300 mil)