MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH

DESCRIPTION The µPD168001 is a monolithic 4-channel H bridge driver and low-side switch IC that uses a power MOSFET at the output stage. Because of the MOSFET at the output stage, both the inputs and outputs are interfaced by PWM digital signals, and the power consumption can therefore be lowered

文件：138.25 Kbytes 页数：20 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES - Four H bridge circuits using power MOSFET and low-side switch - Low on-resistance 4-ch H bridge: 2 Ω MAX. (sum of upper and lower stages) Low-side switch: 2 Ω MAX. - High-speed PWM drive: Operating frequency up to 120 kHz - Thin 30-pin shrink SOP (7.62 mm (300) with 0.65 mm pitch)

文件：289.9 Kbytes 页数：22 Pages

RENESAS

瑞萨

MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH

Renesas

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES - Four H bridge circuits using power MOSFET and low-side switch - Low on-resistance 4-ch H bridge: 2 Ω MAX. (sum of upper and lower stages) Low-side switch: 2 Ω MAX. - High-speed PWM drive: Operating frequency up to 120 kHz - Thin 30-pin shrink SOP (7.62 mm (300) with 0.65 mm pitch)

文件：289.9 Kbytes 页数：22 Pages

RENESAS

瑞萨

MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH

DESCRIPTION The µPD168001 is a monolithic 4-channel H bridge driver and low-side switch IC that uses a power MOSFET at the output stage. Because of the MOSFET at the output stage, both the inputs and outputs are interfaced by PWM digital signals, and the power consumption can therefore be lowered

文件：138.25 Kbytes 页数：20 Pages

NEC

瑞萨

Intelligent Power Devices-Protected and Intelligent Power Switches

Renesas

瑞萨