UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

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900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

文件：189.96 Kbytes 页数：20 Pages

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UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block • LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ´ 7, 8)

文件：374.69 Kbytes 页数：22 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block • LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ´ 7, 8)

文件：374.69 Kbytes 页数：22 Pages

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Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

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High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 25 V/μs (TYP.)  Unity Gain Frequency 6 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

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High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

μPC813 is a high-speed version of μPC811. The J-FET input operational amplifier features a high-speed PNP transistor in the output stage for stable operation at a high slew rate of 25V/us with a gain of 1 (full feedback) The resistor-trimming method proven in other Renesas High-Precision Op-Amp and • Input Offset Voltage: ±1 mV (TYP.) (±2.5 mV MAX.)\n• VIO Temperature Drift: ±7 µV/°C (TYP.)\n• Input Bias Current: 50 pA (TYP.)\n• Slew Rate: 25 V/µs (TYP.)\n• Unity Gain Frequency: 6 MHz (TYP.)\n• Input Equivalent Noise Voltage Density: 19 nV√ Hz (TYP.) (f = 1 kHz)\n• Stable operation against cap;

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功率场效应晶体管

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General-purpose Linear-Operational Amplifiers (op-amp)

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