UPC813

High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±2.5mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate25V/μs(TYP.) UnityGainFrequency6MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagain

UPC8130TA

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

UPC8130TA

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES •Recommendedoperatingfrequency:f=800MHzto1.5GHz •Lowdistortion:Padj£–60dBcMAX.@Pin=–15dBm,Df=±50kHz,VCC=3.0V, TA=+25°C •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0t

UPC8130TA-E3

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T

UPC8130TA-E3

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES •Recommendedoperatingfrequency:f=800MHzto1.5GHz •Lowdistortion:Padj£–60dBcMAX.@Pin=–15dBm,Df=±50kHz,VCC=3.0V, TA=+25°C •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0t

UPC8131TA

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

UPC8131TA-E3

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T

UPC8131TA-E3

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES •Recommendedoperatingfrequency:f=800MHzto1.5GHz •Lowdistortion:Padj£–60dBcMAX.@Pin=–15dBm,Df=±50kHz,VCC=3.0V, TA=+25°C •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0t

UPC8139GR-7JH

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

UPC8139GR-7JH

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

UPC8139GR-7JH

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

UPC8139GR-7JH

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

UPC8139GR-7JH

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

UPC8139GR-7JH

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Lowvoltageoperation,lowcurrentconsumption VCC=2.7to4.0V,ICC=32.5mAattransmitter,ICC=4.8mAatreceiver,3.2mA/@VCC=3Vat2ndVCOblock •LPFisinstalledtosuppressleakageoftransmitter’slocal(L01)harmonics. Spuriouswithintransmissionband(LO1´7,8)

UPC8139GR-7JH-E1

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

UPC8139GR-7JH-E1

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Lowvoltageoperation,lowcurrentconsumption VCC=2.7to4.0V,ICC=32.5mAattransmitter,ICC=4.8mAatreceiver,3.2mA/@VCC=3Vat2ndVCOblock •LPFisinstalledtosuppressleakageoftransmitter’slocal(L01)harmonics. Spuriouswithintransmissionband(LO1´7,8)

UPC813G2-A

High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±2.5mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate25V/μs(TYP.) UnityGainFrequency6MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagain

(SPC)813

THS4521/2/4EVM

813

Mill-MaxSpring-loadedConnectorsMinimizeNoise

813

PCMount,Shocksafe5x20mm/6.3x32mmFuses