High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 25 V/μs (TYP.)  Unity Gain Frequency 6 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

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BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

文件：453.59 Kbytes 页数：42 Pages

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

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-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

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丝印：C2Q；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

文件：453.59 Kbytes 页数：42 Pages

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

瑞萨

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

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丝印：C2R；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

文件：453.59 Kbytes 页数：42 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block • LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ´ 7, 8)

文件：374.69 Kbytes 页数：22 Pages

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RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

文件：126.48 Kbytes 页数：12 Pages

NEC

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