5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The

文件：80.47 Kbytes 页数：12 Pages

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2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER

DESCRIPTION AND APPLICATIONS The UPC2776T is a Silicon Monolithic integrated circuit manufactured using the NESAT III process. This device is suitable for wide band IF blocks due to its high gain and flat response. The UPC2776T is designed as a low cost IC gain stage in DBS, TVRO, PCS, WLAN and o

文件：44.03 Kbytes 页数：3 Pages

NEC

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5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

Renesas

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2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER

DESCRIPTION AND APPLICATIONS The UPC2776T is a Silicon Monolithic integrated circuit manufactured using the NESAT III process. This device is suitable for wide band IF blocks due to its high gain and flat response. The UPC2776T is designed as a low cost IC gain stage in DBS, TVRO, PCS, WLAN and o

文件：44.03 Kbytes 页数：3 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The

文件：80.47 Kbytes 页数：12 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The

文件：80.47 Kbytes 页数：12 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Circuit current : ICC = 25 mA TYP. @VCC = 5.0 V • Power gain : GP = 23 dB TYP. @f = 1 GHz • Medium output power : PO(1 dB) = +6.5 dBm @f = 1 GHz • Upper limit operating frequency : fu = 2.7 GHz TYP. @3 dB bandwidth • Port impedance : input/out

文件：315.93 Kbytes 页数：18 Pages

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丝印：C2L；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Circuit current : ICC = 25 mA TYP. @VCC = 5.0 V • Power gain : GP = 23 dB TYP. @f = 1 GHz • Medium output power : PO(1 dB) = +6.5 dBm @f = 1 GHz • Upper limit operating frequency : fu = 2.7 GHz TYP. @3 dB bandwidth • Port impedance : input/out

文件：315.93 Kbytes 页数：18 Pages

RENESAS

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The

文件：80.47 Kbytes 页数：12 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：103.53 Kbytes 页数：16 Pages

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