UPC2776TRF/IF射频/中频RFID的射频放大器规格书PDF中文资料

DESCRIPTION

The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold.

The µPC2776TB has compatible pin connections and performance to the µPC2776T of conventional minimold version. So, in the case of reducing your system size, the µPC2776TB is suitable to replace from the µPC2776T.

These IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• High-density surface mounting: 6-pin super minimold package

• Wideband response : fu = 2.7 GHzTYP. @ 3 dB bandwidth

• Medium output power : Po (1 dB) = +6.5 dBm @ f = 1 GHz with external inductor

• Supply voltage : VCC = 4.5 to 5.5 V

• Power gain : GP = 23 dBTYP. @ f = 1 GHz

• Port impedance : input/output 50 Ω

APPLICATION

• Systems required wideband operation from HF to 2.0 GHz