3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

文件：171.89 Kbytes 页数：28 Pages

NEC

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丝印：C2H；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 页数：30 Pages

RENESAS

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3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt

文件：84.97 Kbytes 页数：4 Pages

NEC

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3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：240.2 Kbytes 页数：28 Pages

NEC

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3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

文件：188.12 Kbytes 页数：7 Pages

CEL

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：240.2 Kbytes 页数：28 Pages

NEC

瑞萨

3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

文件：188.12 Kbytes 页数：7 Pages

CEL

3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

Renesas

瑞萨

3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION\nThe UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt su • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical\n• HIGH OUTPUT POWER:\n   PSAT = +12.5 dBm at 900 MHz\n               +11 dBm at 1500 MHz\n• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE;

Renesas

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Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP CELL 900MHZ-1.5GHZ SOT363

CEL