3 V, 900 MHz Si MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：63.23 Kbytes 页数：5 Pages

NEC

瑞萨

3 V, 900 MHz Si MMIC AMPLIFIER

DESCRIPTION\nThe UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz.\nThis amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operating • LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V\n• LOW POWER CONSUMPTION: 15 mW TYP\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE;

Renesas

瑞萨

SOT-363

RENESAS

瑞萨

上传：深圳市宇创芯科技有限公司

SOT363

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT363

RENESAS

瑞萨

上传：深圳市正纳电子有限公司