THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Built-in the saturation protection circuit of the output transistor. • The capability of output current is 1 A • High accuracy of output voltage. | D VO | £ ±2 (TJ = 25 °C) | D VO | £ ±3 (0 °C £ TJ £ 125 °C) • Low dropout voltage. VDIF £ 1 V (IO £ 1 A, TJ £ 125 °C) • Built-in

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RENESAS

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3 Terminal Regulators

Renesas

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N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

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SUTEX

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

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MOTOROLA

摩托罗拉