UPC1679中文资料5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER数据手册Renesas规格书

描述 Description

DESCRIPTION
The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™ IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.FEATURES
• Supply voltage : VCC= 4.5 to 5.5 V
• Saturated output power : PO(sat)= +15.5 dBm TYP. @ f = 500 MHz with external inductor
• Wideband response  : fu= 1.8 GHz TYP. @ 3 dB bandwidth
• Isolation : ISL = 34 dB TYP. @ f = 500 MHz
• Power Gain : GP= 21.5 dB TYP. @ f = 500 MHz

特性 Features

• Supply voltage : VCC= 4.5 to 5.5 V
• Saturated output power : PO(sat)= +15.5 dBm TYP. @ f = 500 MHz with external inductor
• Wideband response  : fu= 1.8 GHz TYP. @ 3 dB bandwidth
• Isolation : ISL = 34 dB TYP. @ f = 500 MHz
• Power Gain : GP= 21.5 dB TYP. @ f = 500 MHz