NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECs UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NECs new ult

文件：135.07 Kbytes 页数：11 Pages

NEC

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NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

文件：254.39 Kbytes 页数：20 Pages

RENESAS

瑞萨

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

文件：254.39 Kbytes 页数：20 Pages

RENESAS

瑞萨

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

文件：254.39 Kbytes 页数：20 Pages

RENESAS

瑞萨

NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECs UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NECs new ult

文件：135.07 Kbytes 页数：11 Pages

NEC

瑞萨

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

文件：254.39 Kbytes 页数：20 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

文件：222.52 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

文件：222.52 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

文件：291.89 Kbytes 页数：12 Pages

CEL

NPN SILICON RF TWIN TRANSISTOR

文件：291.89 Kbytes 页数：12 Pages

CEL