UPA833TF-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The UPA833TF has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.

FEATURES

• LOW NOISE:

Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA

Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

• HIGH GAIN:

Q1: |S21E|2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,

lc = 3 mA

Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,

lc = 10 mA

• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

• 2 DIFFERENT BUILT-IN TRANSISTORS

(Q1: NE688, Q1: NE685)