UPA811T-T1-A说明书PDF资料库存现货瑞萨CEL-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA811T-T1-A	文件：194.94 Kbytes Page：4 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：194.94 Kbytes 页数：4 Pages	CEL	CEL
UPA811T-T1-A	文件：480.88 Kbytes Page：3 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes 页数：3 Pages	CEL	CEL
UPA811T-T1	文件：219.4 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：219.4 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA811T-T1	文件：49.15 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：49.15 Kbytes 页数：6 Pages	NEC 瑞萨	NEC

更多UPA811T-T1-A供应商更新时间2025-10-10 16:54:00