MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2805UT1L is N-channel MOS FET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low QG • Thin type surf

文件：379.72 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2805UT1L is N-channel MOS FET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low QG • Thin type surf

文件：379.72 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2805UT1L is N-channel MOS FET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low QG • Thin type surf

文件：379.72 Kbytes 页数：8 Pages

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SOT353

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上传：深圳市正纳电子有限公司

SOT363

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上传：深圳市正纳电子有限公司