首页 >UPA2450CTL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2450Cisaswitchingdevice,whichcanbedrivendirectlybya2.5Vpowersource. TheμPA2450Cfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •2.5V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2450Cisaswitchingdevice,whichcanbedrivendirectly bya2.5Vpowersource. TheμPA2450Cfeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitchofportablemachineandsoon. FEATURES •2. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2450Cisaswitchingdevice,whichcanbedrivendirectlybya2.5Vpowersource. TheμPA2450Cfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •2.5V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2450Cisaswitchingdevice,whichcanbedrivendirectly bya2.5Vpowersource. TheμPA2450Cfeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitchofportablemachineandsoon. FEATURES •2. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA2450isaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •2.5Vdri | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2450isaswitchingdevicewhichcanbedriven directlybya2.5Vpowersource. Thisdevicefeaturesalowon-stateresistanceand excellentswitchingcharacteristics,andissuitablefor applicationssuchaspowerswitchofportablemachineand soon. FEATURES •2.5V | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Voltage-ControlledOscillatorSurfaceMountModule | ZCOMM Z-Communications, Inc | ZCOMM | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2450isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | SUTEX | ||
EaseofParalleling | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
Directionalpatternwithlowbackscatter | LSTD Laird Tech Smart Technology | LSTD | ||
OEMModuleDevelopersKits | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
ExternalTwo-WayRadioAntenna | LSTD Laird Tech Smart Technology | LSTD | ||
GLB2550 DESCRIPTION TheOLB2350/YLB2450/GLB2550lightbarsarerectangulardisplaysdesignedforapplicationsrequiringalargelightemittingarea.Theyareconfiguredinasinglein-linepackageandcontainasinglelightemittingarea. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
CavityBandpassFilters | MINI Mini-Circuits | MINI | ||
CavityBandpassFilters | MINI Mini-Circuits | MINI |
详细参数
- 型号：
UPA2450CTL
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装RENES |
2020+ |
HWSON6 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RENESAS |
20+ |
HWSON6 |
11520 |
特价全新原装公司现货 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TSSOP-6 |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
RENESAS/瑞萨 |
2021+ |
HWSON6 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
原装RENESAS |
21+ |
HWSON6 |
8109 |
原装现货假一赔十 |
询价 | ||
原装RENESAS |
22+ |
HWSON6 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
RENESAS/瑞萨 |
20+ |
HWSON6 |
2340 |
原装现货 |
询价 | ||
RENESAS/瑞萨 |
21+ |
HWSON6 |
10000 |
全新原装 公司现货 价格优 |
询价 | ||
RENESAS/瑞萨 |
23+ |
HWSON6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
21+ |
HWSON6 |
13880 |
公司只售原装,支持实单 |
询价 |
相关规格书
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相关库存
更多- UPA2450TL
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- UPA2708GR-E2
- UPA2708TP
- UPA2708TP-E1-AZ
- UPA2708TP-E2-AZ
