MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 页数：8 Pages

RENESAS

瑞萨

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.74 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.85 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 页数：8 Pages

RENESAS

瑞萨