MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.74 Kbytes 页数：9 Pages

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.85 Kbytes 页数：9 Pages

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微碧半导体

MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 页数：8 Pages

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Pch Single Power Mosfet -40V -4.5A 65Mohm

The UPA1931TE is a Pch Single Power Mosfet -40V -4.5A 65Mohm. • 4.5 V drive available\n• Low on-state resistance RDS(on)1 = 65 mΩ MAX. (VGS = −10 V, ID = −1.8 A) RDS(on)2 = 100 mΩ MAX. (VGS = −4.5 V, ID = −1.8 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA1931 Data SheetPDF117 KB数据手册 2012年5月9日功率MOS FET 功率MOS FET使用时的注意事项;

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