COMPOUND TRANSISTOR

HIGH FREQUENCY NPN TRANSISTOR ARRAYDESCRIPTION AND APPLICATIONS\nThis Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications include a multiplier, double balanced mixer, phase detector, or AGC circuit. The two package options offer a choice of excellent heat d • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (Each Transistor has fT 9 GHz)\n• TWO PACKAGE OPTIONS:\n   µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package\n   µPA101G: Reduced circuit size due to 8-pin plastic SOP package for surface mounting ;

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HIGH FREQUENCY NPN TRANSISTOR ARRAY

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz • Input/output impedance matched to 50
• Hermetic sealed ceramic package assures high reliability

文件：217.3 Kbytes 页数：10 Pages

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WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

文件：106.01 Kbytes 页数：8 Pages

NEC

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GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz

文件：212.09 Kbytes 页数：10 Pages

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