P-Channel MOSFET

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UNSEMI

优恩半导体

NECs POWER AMPLIFIER FOR BLUETOOH CLASS 1

[CEL] DESCRIPTION NECs µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a low profile 10-pin plastic TSON package. FEATURES • OPERATION FREQUENCY fopt

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GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.) • Control voltage : Vcont = 0 to 3.6 V (2.5 V TYP.) : Venable = 0 to 3.1 V (2.9 V TYP.) • Circuit current : ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vc

文件：227.95 Kbytes 页数：12 Pages

RENESAS

瑞萨

P -Channel E nhancement Mode F ield E ffect Trans is tor

文件：353.41 Kbytes 页数：7 Pages

XINDEYI