2N7002

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=60V,ID=0.115A RDS(ON)

2N7002

0.3Amps,60VoltsN-CHANNELPOWERMOSFET

2N7002

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity.

2N7002

N-channelverticalD-MOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:2N7002inSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic

2N7002

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ··

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.35W(Tamb=25℃) Draincurrent ID:250mA Drain-Sourcevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002

SmallSignalMOSFETTransistor

SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

2N7002

OptiMOS??Small-Signal-Transistor

OptiMOSSmall-Signal-Transistor Features •N-channel •Enhancementmode •Logiclevel •Avalancherated •fastswitching •Pb-freelead-plating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

2N7002

N-ChannelMOSFETusesadvancedtrenchtechnology