Digital Transistors

文件：519.289 Kbytes 页数：4 Pages

MCC

丝印：D9；Package：SOT-363；Digital Transistor (Dual Digital Transistors for Inverter Drive)

文件：146.18 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D9；Package：SOT-363；General purpose (dual digital transistor)

文件：1.72967 Mbytes 页数：13 Pages

ROHM

罗姆

DIGITAL TRANSISTOR (NPNPNP)

文件：657.82 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

Dual Digital Transistors

文件：1.48774 Mbytes 页数：5 Pages

JIANGSU

长电科技

Digital Transistor (Dual Digital Transistors for Inverter Drive)

文件：146.18 Kbytes 页数：4 Pages

ROHM

罗姆

General purpose (Dual digital transistor)

文件：1.48446 Mbytes 页数：10 Pages

ROHM

罗姆

BRUSH DC MOTOR DRIVE CIRCUIT

UTC UMD9113 is an integrated brush DC motor drive solutionfor battery-powered toys, low-voltage or battery-powered motioncontrol applications. It has H bridge driver and uses the PMOS andNMOS power transistors with low output resistance. Lowon-resistance ensures the circuit to consume lower power in H bridge driver of internal PMOS/NMOS power switches Built-in anti-common state conduction circuit. Low output impedance Low standby current (typ.0.1μA) Low static operational current On-chip thermal shut down (TSD) with hysteresis;

UTC

友顺

0 DC TAIL ROTOR MOTOR, STEERING GEAR MOTOR DRIVE CIRCUIT

UTC UMD9114 is an integrated brush DC motor drive solutionfor battery-powered toys, low-voltage or battery-powered motioncontrol applications. It has H bridge driver and uses the PMOS andNMOS power transistors with low output resistance. Lowon-resistance ensures the circuit to consume lower power in Low standby current (0.1μA typ.) PMOS and NMOS power transistors with low output resistanceIf IO is 100mA, RON of power transistor is 1.5ΩIf IO is 200mA, RON of power transistor is 1.6ΩIf IO is 300mA, RON of power transistor is 1.7Ω Built-in Subsequent stream diode —No external diode required Low in;

UTC

友顺

BRUSH DC MOTOR DRIVE CIRCUIT

UTC UMD9115 is an integrated brush DC motor drive solutionfor battery-powered toys or battery-powered motion controlapplications. It has H bridge driver and uses the PMOS and NMOSpower transistors with low output resistance. Low on-resistanceensures the circuit to consume lower power in operating at H bridge driver of internal PMOS/NMOS power switches Built-in motor driving power transistors (typ.200mA) Built-in anti-common state conduction circuit. Direct control with the CMOS logic Low standby current (typ.0.1uA) Low static operational current On-chip thermal shut down (TSD) with hysteresis;

UTC

友顺