丝印：UMB110；Package：UMB；1A SURFACE MOUNT SCHOTTKY BRIDGE

文件：434.41 Kbytes 页数：3 Pages

YFWDIODE

佑风微

肖特基桥式整流器

Jingdao

晶导

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：50.9 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on)=3Ω * Low threshold voltage

文件：22.43 Kbytes 页数：1 Pages

ZETEX

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

ZETEX