采用SOT323封装的20V P沟道功率MOSFET

\n The UM8517P is a low threshold P-channel MOSFET, having extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT323 package.\n . ◆ Drain-Source Voltage (Max): -20V\n◆ Low On-Resistance:\n◆ Continuous Drain Current (Max): -1.4A@25°C;

Union-IC

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采用SOT323封装的20V P沟道功率MOSFET

The UM8517PP is a low threshold P-channel MOSFET, having extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT323 package.\n\n. - Drain-Source Voltage (Max): -20V\n- Low On-Resistance:\n  90mΩ@VGS=-4.5V\n  130mΩ@VGS=-2.5V\n- Continuous Drain Current (Max): -1.4A@25°C;

Union-IC

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