UM5082数据手册Union-IC中文资料规格书

描述 Description

The UM5082 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high transient currents, offers desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs.

The UM5082 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5082 is available in a DFN3 1.0×0.6 package with working voltages of 5 volt.

It gives designer the flexibility to protect one or two unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).

特性 Features

- Transient Protection for Data & Power Lines to
  IEC 61000-4-2 (ESD) ±15kV(Air)，
  IEC 61000-4-2 (ESD) ±8kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One or Two I/O Lines
- Low Clamping Voltage
- Stand-Off Voltage: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology

应用 Application

- Protect One or Two I/O Lines
- Low Clamping Voltage
- Stand-Off Voltage: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology