UM5059T数据手册Union-IC中文资料规格书

描述 Description

The UM5059T ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The UM5059T ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5059T is available in TDFN2 1.0×0.6 (compatible with SOD923 & SOD882) package with working voltages of 5 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge.

特性 Features

- Transient Protection for Data Lines to
   IEC 61000-4-2 (ESD) ±30kV (Air), ±30kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand-off Voltages: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
- Small Body Outline Dimensions: 1.0mm×0.6mm

应用 Application

- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand-off Voltages: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
- Small Body Outline Dimensions: 1.0mm×0.6mm