AOI417

P-Channel40V(D-S)MOSFET

AOI417

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

AOU417

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde

AOU417

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOU417

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-18A@TC=25℃ ·DrainSourceVoltage :VDSS=-30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

AOU417L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde

ATTINY417

AVR짰MicrocontrollerwithCoreIndependentPeripheralsandpicoPower짰Technology

BB417

UHFvariablecapacitancediode

DESCRIPTION TheBB417isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD68(DO-34)package. FEATURES •Excellentlinearity •HermeticallysealedleadedglassSOD68(DO-34)package •C15:3pF;ratio:3.5. APPLICATION

BF417

NPNSILICONTRANSISTOR,EPITAXIALPLANAR

BUH417

SEMICONDUCTORS