Dynamic NFC tag expansion board based on M24SR for STM32 Nucleo

文件：401.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Dynamic NFC tag expansion board based on M24SR for STM32 Nucleo

ST

意法半导体

SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The µPA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)

文件：118.52 Kbytes 页数：12 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A) P-Channel RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID

文件：346.61 Kbytes 页数：14 Pages

RENESAS

瑞萨

SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The µPA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)

文件：118.52 Kbytes 页数：12 Pages

NEC

瑞萨