The purpose of this document is to describe the design of the application

文件：1.37489 Mbytes 页数：123 Pages

STMICROELECTRONICS

意法半导体

The purpose of this document is to describe the design of the application

ST

意法半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, I

文件：227.96 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.5

文件：59.92 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, I

文件：227.96 Kbytes 页数：10 Pages

RENESAS

瑞萨