UJ4C075044L8S中文资料750 V, 44 mohm SiC FET数据手册Qorvo规格书

描述 Description

The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualification in process. Please contact Sales for more information.

特性 Features

• On Resistance RDS(on): 44 mohm (typ)
• Operating temperature: 175C (max)
• Excellent reverse recovery: Qrr = 89nC
• Low body diode VFSD: 1.2V
• Low gate charge: QG = 37.8nC
• Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
• Low intrinsic capacitance
• ESD protected: HBM class 2 and CDM class C3
• TOLL package for faster switching, clean gate waveforms

应用 Application

• Server and Telecom power supplies
• Switch mode power supplies
• DC-DC converter circuits
• EV Charging Stations
• PV Inverters