Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-22

文件：129.449 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220

文件：138.7 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220

文件：138.7 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220

文件：138.7 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220

文件：138.7 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220

文件：138.7 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ultrafast Recovery Rectifier

Power pack\n Oxide planar chip junction\n Ultrafast recovery times\n\n ;

Vishay

威世科技

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 300V 10A TO263AB

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 300V 10A D2PAK

Vishay General Semiconductor - Diodes Division