Phase Leg

Microchip

微芯科技

Package：模块；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE MODULE 200V 100A

Microsemi

美高森美

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

文件：167.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：130.83 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.15 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世