Ultrafast Recovery Modules

文件：218.72 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Ultrafast Recovery Modules

文件：218.72 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Dual 4-Bit Static Shift Register

The MC14015B dual 4−bit static shift register is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Features • Diode Protection on All Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Logic Edge−Clocked Flip−Flop Design • Logic State is

文件：251.65 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Dual 4-Bit Static Shift Register

The MC14015B dual 4−bit static shift register is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Features • Diode Protection on All Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Logic Edge−Clocked Flip−Flop Design • Logic State is

文件：251.65 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Dual 4-Bit Static Shift Register

The MC14015B dual 4−bit static shift register is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Features • Diode Protection on All Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Logic Edge−Clocked Flip−Flop Design • Logic State is

文件：251.65 Kbytes 页数：12 Pages

ONSEMI

安森美半导体